Ushbu ishga iqtibos qilgan ishlar

6 ta ish

Ish: X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

1. The Mechanism of the Formation of Binary Compounds Between Zn and S Impurity Atoms in Si Crystal Lattice

   Н. Ф. Зикриллаев, Maruf K. Khakkulov, B. O. Isakov

   MaqolaOAOchiq kirishSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20232 iqtibos

   ABIABI:AkademIndex/2023.article.002461

2. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

   Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

   MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20242 iqtibos

   ABIABI:AkademIndex/2024.article.002753

3. The Prospects of Obtaining a New Material with a Hetero-Baric Structure Gexsi1 – x-Si Based on Silicon for Photo Energy Applications

   Habibjon Kushiev, B. O. Isakov, U. X. Mukhammadjonov

   MaqolaOAOchiq kirishMaterial Properties and ApplicationsJournal of Nano- and Electronic Physics20241 iqtibos

   ABIABI:AkademIndex/2024.article.003016

4. Electrodifusion of Manganese Atoms in Silicon

   Xalmurat M. Iliyev, Zafar B. Khudoynazarov, B. O. Isakov +2

   MaqolaOAOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20241 iqtibos

   ABIABI:AkademIndex/2024.article.003062

5. Effective Charge of Mn and Ni Impurity Atoms in Silicon Under the Influence of An External Electric Field

   B. O. Isakov, Xalmurat M. Iliyev, Zafar B. Khudoynazarov +1

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 iqtibos

   ABIABI:AkademIndex/2025.article.009031

6. Thermal stability parameters of silicon doped with nickel impurity atoms

   B. K. Ismaylov, Kanatbay A. Ismailov, Paraxat Dlimbetov +2

   MaqolaThermal properties of materialsAIP conference proceedings20250 iqtibos

   ABIABI:AkademIndex/2025.article.009659