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Ish: Mechanisms of Current Transition in High Compensated Silicon Samples with Zinc Nanoclusters

1. Current Mechanisms in Zinc Diffusion-Doped Silicon Samples at T = 300 K

   Э. У. Арзикулов, M. Radzhabova, Xuemin Cui +6

   MaqolaOAOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics20240 iqtibos

   ABIABI:AkademIndex/2024.article.010089

2. Current Mechanisms in Zinc Diffusion-doped Silicon Samples at T = 300 K

   Э. У. Арзикулов, M. Radzhabova, S. N. +4

   PreprintAdvancements in Semiconductor Devices and Circuit DesignResearch Square20240 iqtibos

   ABIABI:AkademIndex/2024.preprint.000148