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Ushbu ish iqtibos qilgan ishlar

14 ta ish

Ish: Growing of perfect single-crystal epitaxial films of (Si 2 ) 1-x (GaN) x solid solutions on Si (111) substrates from the liquid phase

  1. X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals

    I. L. Shul’pina, R. N. Kyutt, В. В. Ратников +3

    Maqola201010 iqtibos
    ABI

  2. Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)<sub>1−<i>x</i></sub>(ZnSe)<sub><i>x</i></sub> with Nanocrystals

    A.S. Saidov, Sh. N. Usmonov, D. V. Saparov

    MaqolaOchiq kirishQuantum Dots Synthesis And PropertiesAdvances in Materials Science and Engineering20198 iqtibos
    ABI

  3. Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge<sub>2</sub>)y(ZnSe)z and their photoelectric properties

    A.S. Saidov, D. V. Saparov, Sh. N. Usmonov +2

    MaqolaChalcogenide Semiconductor Thin FilmsInternational Journal of Modern Physics B20227 iqtibos
    ABI

  4. Journal of Thermal Analysis and Calorimetry

    Maqola20083 iqtibos
    ABI

  5. Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers

    Kai Cheng, Maarten Leys, Stefan Degroote +7

    Maqola20063 iqtibos
    ABI

  6. Growing the solid solution of molekular substitution (GaAs)<sub>1-z</sub>(ZnSe)<sub>z</sub>

    A.S. Saidov, D. V. Saparov, Shukrullo Usmonov +2

    MaqolaOchiq kirishChalcogenide Semiconductor Thin FilmsIOP Conference Series Materials Science and Engineering20212 iqtibos
    ABI

  7. Reduction of Bowing in GaN-on-Sapphire and GaN-on-Silicon Substrates by Stress Implantation by Internally Focused Laser Processing

    Hideo Aida, Hidetoshi Takeda, Natsuko Aota +1

    Maqola20112 iqtibos
    ABI

  8. Growth of crack-free GaN on Si(111) with graded AlGaN buffer layers

    A. Able, W. Wegscheider, Karl Engl +1

    Maqola20052 iqtibos
    ABI

  9. Kinetic surface roughening and wafer bow control in heteroepitaxial growth of 3C-SiC on Si(111) substrates

    Li Wang, Glenn M. Walker, Jessica Chai +3

    Maqola20152 iqtibos
    ABI

  10. Analysis of the growth of GaN epitaxy on silicon

    Danmei Zhao, Degang Zhao

    Maqola20182 iqtibos
    ABI

  11. Synthesis Gallium Nitride on Porous Silicon Nano-Structure for Optoelectronics Devices

    Haneen D. Jabbar, Makram A. Fakhri, Mohammed Jalal AbdulRazzaq

    Maqola20222 iqtibos
    ABI

  12. Epitaxial Growth of GaN/AlN on <i>h</i>-BN/Si(111) by Metal–Organic Chemical Vapor Deposition: An Interface Analysis

    R. Loganathan, Muzafar Ahmad Rather, Kun‐Lin Lin +4

    Maqola20232 iqtibos
    ABI

  13. Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer

    Marwan Mansor, Rizuan Norhaniza, Ahmad Shuhaimi Abu Bakar +4

    Maqola20232 iqtibos
    ABI

  14. Preparation and Characterization of UV-Enhanced GaN/ Porous Si Photodetector using PLA in Liquid

    Makram A. Fakhri, Ali Abdulkhaleq Alwahib, Evan T. Salim +7

    Maqola20232 iqtibos
    ABI