Asosiy kontentga oʻtish
AkademIndex

Xizmatlar

← Ishga qaytish

Ushbu ish iqtibos qilgan ishlar

9 ta ish

Ish: Effect of the Magnetic Field, Electric Field, and Light Intensity on the Parameters of Recombination Waves in Silicon

  1. Some features of chemical interaction between a fast diffusing impurity and a group VI element in silicon

    M. K. Bakhadirkhanov, Sh. I. Askarov, Н. Норкулов

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19949 iqtibos
    ABI

  2. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

    Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

    MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20235 iqtibos
    ABI

  3. Thermally stimulated currents and instabilities of the photoresponse in PbTe(In) alloys at low temperatures

    Б.А. Акимов, V. A. Bogoyavlenskii, L. I. Ryabova +2

    Maqola19995 iqtibos
    ABI

  4. Formation of Se2 quasimolecules in selenium-doped silicon

    A. A. Taskin, E. G. Tishkovskiǐ

    Maqola19983 iqtibos
    ABI

  5. Self-Oscillatory Processes in Silicon, Problems and Prospects for Research, and Their Application in Electronics

    Н. Ф. Зикриллаев, M. M. Shoabdurakhimova, K. S. Ayupov +2

    MaqolaSemiconductor Quantum Structures and DevicesSurface Engineering and Applied Electrochemistry20243 iqtibos
    ABI

  6. Spectral range of current self-oscillation in manganese-doped silicon

    M. K. Bakhadirkhanov, Н. Ф. Зикриллаев, K. S. Ayupov +3

    MaqolaSilicon and Solar Cell TechnologiesTechnical Physics20062 iqtibos
    ABI

  7. Generation-recombination instabilities in thin-film structures

    V. V. Kolobaev

    Maqola19992 iqtibos
    ABI

  8. Current Instability in Germanium due to Excitation of the Recombination Waves

    I. V. Karpova, S. G. Kalashnikov, O. V. Konstantinov +2

    Maqola19692 iqtibos
    ABI

  9. Sarlavhasiz

    Boshqa1 iqtibos
    ABI