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Ish: Formation of Barium Silicide Coatings by Vacuum Thermal Evaporation Methods

1. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films

   M. T. Normurodov, А.С. Рысбаев, I. R. Bekpulatov +2

   MaqolaSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques202117 iqtibos

   ABIABI:AkademIndex/2021.article.000283

2. Obtaining of thin films of manganese silicides on a Si surface by the method of solid-phase deposition and investigation of their electronic structure

   Б. Е. Умирзаков, Gunel Imanova, I. R. Bekpulatov +1

   MaqolaSemiconductor materials and interfacesModern Physics Letters B202317 iqtibos

   ABIABI:AkademIndex/2023.article.000250

3. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions

   А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2

   MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 iqtibos

   ABIABI:AkademIndex/2017.article.000091

4. Formation of thin Crsi ₂ films by the solid-phase ion-plasma method and their thermoelectric properties

   I. R. Bekpulatov, Gunel Imanova, Б. Е. Умирзаков +5

   MaqolaAdvanced Thermoelectric Materials and DevicesMaterials Research Innovations202410 iqtibos

   ABIABI:AkademIndex/2024.article.000742

5. Sarlavhasiz

   Boshqa4 iqtibos

   ABIABI:AkademIndex/2026.other.390326

6. Electronic and optical properties of bulk crystals of semiconducting orthorhombic BaSi2 prepared by the vertical Bridgman method

   Shingo Kishino, Tomohiro Imai, Tsutomu Iida +4

   Maqola20063 iqtibos

   ABIABI:AkademIndex/2026.other.263055

7. Potential variations around grain boundaries in impurity-doped BaSi2 epitaxial films evaluated by Kelvin probe force microscopy

   Daichi Tsukahara, Masako Baba, Syuta Honda +6

   Maqola20143 iqtibos

   ABIABI:AkademIndex/2026.other.705855

8. ZrO2 magnetron growth method and investigation of thin film growth

   Б.Д. Игамов, A.I. Kamardin, Y. S. Ergashov +1

   MaqolaSemiconductor materials and devicesAIP conference proceedings20242 iqtibos

   ABIABI:AkademIndex/2024.article.004199

9. Sarlavhasiz

   Boshqa2 iqtibos

   ABIABI:AkademIndex/2026.other.739975

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    ABIABI:AkademIndex/2026.other.739962

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    ABIABI:AkademIndex/2026.other.739963

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    ABIABI:AkademIndex/2026.other.739964

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    ABIABI:AkademIndex/2026.other.739965

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    ABIABI:AkademIndex/2026.other.739966

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    ABIABI:AkademIndex/2026.other.739967

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    ABIABI:AkademIndex/2026.other.739968

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    Boshqa1 iqtibos

    ABIABI:AkademIndex/2026.other.739969

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    ABIABI:AkademIndex/2026.other.739970

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    ABIABI:AkademIndex/2026.other.739971

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    ABIABI:AkademIndex/2026.other.739972

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    ABIABI:AkademIndex/2026.other.739973

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    ABIABI:AkademIndex/2026.other.739974

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    ABIABI:AkademIndex/2026.other.739976

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    ABIABI:AkademIndex/2026.other.739977

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