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23 ta ish

Ish: Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

  1. Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

    I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5

    MaqolaOchiq kirishChalcogenide Semiconductor Thin FilmsE3S Web of Conferences202317 iqtibos
    ABI

  2. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202417 iqtibos
    ABI

  3. OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES

    Jo`shqin Abdullayev, I. B. Sapaev

    Maqola202415 iqtibos
    ABI

  4. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics202413 iqtibos
    ABI

  5. An Explicit Quantum-Mechanical Compact Model for the <italic>I-V</italic> Characteristics of Cylindrical Nanowire MOSFETs

    Regiane Ragi, Rafael Nobrega, Ulysses Rondina Duarte +1

    Maqola201613 iqtibos
    ABI

  6. Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors

    Renan Trevisoli, Rodrigo T. Doria, Michelly de Souza +3

    MaqolaOchiq kirish201212 iqtibos
    ABI

  7. Modeling and calibration of electrical features of p-n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaOchiq kirishSemiconductor materials and interfacesPhysical Sciences and Technology202411 iqtibos
    ABI

  8. Fabrication and studies on Si/InP core-shell nanowire based solar cell using etched Si nanowire arrays

    Biswajit Pal, Kalyan Jyoti Sarkar, P. Banerji

    Maqola201911 iqtibos
    ABI

  9. Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures

    Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev

    MaqolaSemiconductor Quantum Structures and DevicesLow Temperature Physics202510 iqtibos
    ABI

  10. Some Electrophysical Properties of Polycrystalline Silicon Obtained in a Solar Oven

    L. O. Olimov, Iqboljon Ibroximovich Anarboyev

    MaqolaOchiq kirishSilicon Nanostructures and PhotoluminescenceSilicon202210 iqtibos
    ABI

  11. Model of the grain boundary in p-n structures based on polycrystalline semiconductors

    L. O. Olimov

    Maqola20109 iqtibos
    ABI

  12. Optical and electrical modeling of solar cells based on graphene/Si nanowires with radial p–i–n junctions

    Zahra Arefinia, Asghar Asgari

    Maqola20158 iqtibos
    ABI

  13. Electrical and optical properties of nanowires based solar cell with radial p-n junction

    O. V. Pylypova, А.А. Еvtukh, P.V. Parfenyuk +4

    MaqolaOchiq kirish20198 iqtibos
    ABI

  14. Adsorption of alkali metals and their effect on electronic properties of grain boundaries in bulk of polycrystalline silicon

    L. O. Olimov

    MaqolaThin-Film Transistor TechnologiesSemiconductors20108 iqtibos
    ABI

  15. Controlled Doping Methods for Radial p/n Junctions in Silicon

    Rick Elbersen, Roald M. Tiggelaar, Alexander Milbrat +3

    MaqolaOchiq kirish20147 iqtibos
    ABI

  16. Effect of alkali metals on the electronic properties of grain boundaries on a polycrystalline silicon surface

    L. O. Olimov

    MaqolaSilicon and Solar Cell TechnologiesSemiconductors20127 iqtibos
    ABI

  17. High efficiency silicon solar cell based on asymmetric nanowire

    Myung-Dong Ko, Taiuk Rim, Ki‐Hyun Kim +2

    MaqolaOchiq kirish20156 iqtibos
    ABI

  18. Theory of the Junctionless Nanowire FET

    Elena Gnani, A. Gnudi, Susanna Reggiani +1

    Maqola20116 iqtibos
    ABI

  19. Analytical modelling and device design optimisation of epitaxial layer‐based III–V tunnel FET

    Prabhat Kumar Dubey, Brajesh Kumar Kaushik, Eddy Simoen

    Maqola20196 iqtibos
    ABI

  20. Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs

    Adelcio M. de Souza, Daniel R. Celino, Regiane Ragi +1

    Maqola20216 iqtibos
    ABI

  21. Si microwire-array solar cells

    Morgan C. Putnam, Shannon W. Boettcher, Michael D. Kelzenberg +6

    MaqolaOchiq kirish20105 iqtibos
    ABI

  22. Influence of alkali metals on electrical resistance of poly-Si structures for solar cells

    L. O. Olimov

    MaqolaThin-Film Transistor TechnologiesApplied Solar Energy20084 iqtibos
    ABI

  23. Mechanism of thermoelectric material efficiency increase

    Iqboljon Anarboyev, L. O. Olimov

    MaqolaOchiq kirishAdvanced Thermoelectric Materials and DevicesAIP conference proceedings20242 iqtibos
    ABI