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36 ta ish

Ish: Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature

  1. Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

    I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5

    MaqolaOchiq kirishChalcogenide Semiconductor Thin FilmsE3S Web of Conferences202317 iqtibos
    ABI

  2. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202417 iqtibos
    ABI

  3. OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES

    Jo`shqin Abdullayev, I. B. Sapaev

    Maqola202415 iqtibos
    ABI

  4. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics202413 iqtibos
    ABI

  5. Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202513 iqtibos
    ABI

  6. An Explicit Quantum-Mechanical Compact Model for the <italic>I-V</italic> Characteristics of Cylindrical Nanowire MOSFETs

    Regiane Ragi, Rafael Nobrega, Ulysses Rondina Duarte +1

    Maqola201613 iqtibos
    ABI

  7. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

    Jo`shqin Abdullayev

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202512 iqtibos
    ABI

  8. Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors

    Renan Trevisoli, Rodrigo T. Doria, Michelly de Souza +3

    MaqolaOchiq kirish201212 iqtibos
    ABI

  9. GaN nanowire ultraviolet photodetector with a graphene transparent contact

    A. V. Babichev, H. Zhang, Pierre Lavenus +5

    Maqola201311 iqtibos
    ABI

  10. Fabrication and studies on Si/InP core-shell nanowire based solar cell using etched Si nanowire arrays

    Biswajit Pal, Kalyan Jyoti Sarkar, P. Banerji

    Maqola201911 iqtibos
    ABI

  11. Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures

    Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev

    MaqolaSemiconductor Quantum Structures and DevicesLow Temperature Physics202510 iqtibos
    ABI

  12. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202510 iqtibos
    ABI

  13. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202510 iqtibos
    ABI

  14. Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

    Dharmapura H. K. Murthy, Tao Xu, Wanghua Chen +11

    MaqolaOchiq kirish201110 iqtibos
    ABI

  15. A GaAs Nanowire Array Solar Cell With 15.3% Efficiency at 1 Sun

    Ingvar Åberg, Giuliano Vescovi, Damir Asoli +8

    Maqola201510 iqtibos
    ABI

  16. Improvement of carrier ballisticity in junctionless nanowire transistors

    Nima Dehdashti Akhavan, Isabelle Ferain, Pedram Razavi +2

    MaqolaOchiq kirish20119 iqtibos
    ABI

  17. ENHANCEMENT OF POWER CONVERSION EFFICIENCY OF DYE-SENSITIZED SOLAR CELLS VIA INCORPORATION OF GAN SEMICONDUCTOR MATERIAL SYNTHESIZED IN HOT-WALL CHEMICAL VAPOR DEPOSITION FURNACE

    Olzat Toktarbaiuly

    Maqola20249 iqtibos
    ABI

  18. Optical and electrical modeling of solar cells based on graphene/Si nanowires with radial p–i–n junctions

    Zahra Arefinia, Asghar Asgari

    Maqola20158 iqtibos
    ABI

  19. Potential distribution over temperature sensors of p-n junction diodes with arbitrary doping of the base region

    R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +6

    MaqolaOchiq kirishAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences20237 iqtibos
    ABI

  20. High efficiency silicon solar cell based on asymmetric nanowire

    Myung-Dong Ko, Taiuk Rim, Ki‐Hyun Kim +2

    MaqolaOchiq kirish20156 iqtibos
    ABI

  21. Analytical modelling and device design optimisation of epitaxial layer‐based III–V tunnel FET

    Prabhat Kumar Dubey, Brajesh Kumar Kaushik, Eddy Simoen

    Maqola20196 iqtibos
    ABI

  22. Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs

    Adelcio M. de Souza, Daniel R. Celino, Regiane Ragi +1

    Maqola20216 iqtibos
    ABI

  23. Synthesis and Characterization of CdS, ZnS and CdZnS Nanoparticles Embedded in Polystyrene

    Olumide Oluwole Akinwunmi, Gabriel O. Egharevba, E.O.B. Ajayi

    Maqola20145 iqtibos
    ABI

  24. Photoluminescence and<i>I</i>-<i>V</i>characteristics of a CdS-nanoparticles-porous-silicon heterojunction

    Neelima Deshmukh, Tejashree Bhave, Anita Sagadevan Ethiraj +4

    Maqola20015 iqtibos
    ABI

  25. Breaking the Doping Limit in Silicon by Deep Impurities

    Mao Wang, A. Debernardi, Y. Berencén +10

    Maqola20194 iqtibos
    ABI