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7 ta ish

Ish: Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects

  1. Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

    J. Sh. Abdullayev, D. A. Qalandarova, M. Sh. Ibragimova +2

    MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20265 iqtibos
    ABI

  2. Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions

    Jo`shqin Abdullayev, Jonibek Shakirovich Abdullayev, Ibrokhim Bayramdurdiyevich Sapaev +3

    MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20261 iqtibos
    ABI

  3. Experimental and analytical investigation of incomplete ionization in p-Si/n-CdS heterojunctions at cryogenic temperatures

    J. Sh. Abdullayev, I.B. Sapaev

    MaqolaOchiq kirish20260 iqtibos
    ABI

  4. Self-Consistent Fowler–Nordheim Tunneling Modeling in Si/GaAs Heterostructures with Optimized Nanoscale Meshing

    Jo`shqin Abdullayev, L.K. Babajanov, N.P. Babayazova +3

    MaqolaOchiq kirish20260 iqtibos
    ABI

  5. A Systematic Analytical and Numerical Study of Incomplete Dopant Ionization in Germanium Over 4-400 K

    M.Sh. Ibragimova, D. A. Qalandarova, N.P. Babayazova +6

    MaqolaOchiq kirish20260 iqtibos
    ABI

  6. Incomplete Dopant Ionization Effects in GaN Optical Photovoltaic Converters Over 4–400 K for Space Solar Energy Applications

    D. A. Qalandarova, M.Sh. Ibragimova, U.G. Salayev +6

    MaqolaOchiq kirish20260 iqtibos
    ABI

  7. Modeling the Impact of Incomplete Dopant Ionization on Built in Potential and C–V Characteristics of GaN p–n Junctions: A SCAPS-1D Study

    Jo`shqin Abdullayev, I. B. Sapaev, Jonibek Sh. Abdullayev +5

    MaqolaOchiq kirish20260 iqtibos
    ABI