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Ushbu ish iqtibos qilgan ishlar
22 ta ish
Ish: Effect of Dysprosium Atoms Introduced During the Growth Phase on the Formation of Radiation Defects in Silicon Crystals
Research of the Impact of Silicon Doping with Holmium on its Structure and Properties Using Raman Scattering Spectroscopy Methods
Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Alisher Khaitbaev +3
MaqolaOchiq kirishSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20248 iqtibosABIFirst-principles study of radiation defects in silicon
Vladislav Pelenitsyn, Pavel Korotaev
Maqola20226 iqtibosABIScanning Electron Microscopy and X-ray Microanalysis
Joseph I. Goldstein, Dale E. Newbury, Patrick Echlin +5
Kitob20035 iqtibosABIRecent Progress in Silicon−Based Materials for Performance−Enhanced Lithium−Ion Batteries
Xiangzhong Kong, Ziyang Xi, Linqing Wang +6
Sharh maqola20233 iqtibosABICapacitance Transient Spectroscopy
G. L. Miller, D. V. Lang, Lionel C. Kimerling
Maqola19773 iqtibosABIMorphology of the Surface of Silicon Doped with Lutetium
Khodjakbar S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +1
MaqolaOchiq kirish20242 iqtibosABIStudy of Defect Structure of Silicon Doped with Dysprosium Using X-Ray Phase Analysis and Raman Spectroscopy
Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +2
MaqolaOchiq kirish20242 iqtibosABI