Ushbu ish iqtibos qilgan ishlar

27 ta ish

Ish: Impact of incomplete ionization on the critical electric field of <i>p</i> - <i>n</i> junction structures based on Si and GaAs

1. Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

   I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5

   MaqolaOAOchiq kirishChalcogenide Semiconductor Thin FilmsE3S Web of Conferences202317 iqtibos

   ABIABI:AkademIndex/2023.article.000847

2. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

   Jo`shqin Abdullayev, I. B. Sapaev

   MaqolaOAOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202417 iqtibos

   ABIABI:AkademIndex/2024.article.000600

3. OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES

   Jo`shqin Abdullayev, I. B. Sapaev

   Maqola202415 iqtibos

   ABIABI:AkademIndex/2026.other.261553

4. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

   Jo`shqin Abdullayev, I. B. Sapaev

   MaqolaOAOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics202413 iqtibos

   ABIABI:AkademIndex/2024.article.000837

5. Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

   Jo`shqin Abdullayev, I. B. Sapaev

   MaqolaOAOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202513 iqtibos

   ABIABI:AkademIndex/2025.article.000607

6. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

   Jo`shqin Abdullayev

   MaqolaOAOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202512 iqtibos

   ABIABI:AkademIndex/2025.article.000647

7. Modeling and calibration of electrical features of p-n junctions based on Si and GaAs

   Jo`shqin Abdullayev, I. B. Sapaev

   MaqolaOAOchiq kirishSemiconductor materials and interfacesPhysical Sciences and Technology202411 iqtibos

   ABIABI:AkademIndex/2024.article.000836

8. Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures

   Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev

   MaqolaSemiconductor Quantum Structures and DevicesLow Temperature Physics202510 iqtibos

   ABIABI:AkademIndex/2025.article.000546

9. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

   Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

   MaqolaOAOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202510 iqtibos

   ABIABI:AkademIndex/2025.article.000840

10. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

    MaqolaOAOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202510 iqtibos

    ABIABI:AkademIndex/2025.article.000841

11. Potential distribution over temperature sensors of p-n junction diodes with arbitrary doping of the base region

    R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +6

    MaqolaOAOchiq kirishAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences20237 iqtibos

    ABIABI:AkademIndex/2023.article.001003

12. Distribution of impurities in base-depleted region of diode temperature sensor

    R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +5

    MaqolaChalcogenide Semiconductor Thin FilmsLow Temperature Physics20243 iqtibos

    ABIABI:AkademIndex/2024.article.002075

13. Sarlavhasiz

    Boshqa3 iqtibos

    ABIABI:AkademIndex/2026.other.830351

14. Heterointegration of Pt/Si/Ag Nanowire Photodiodes and Their Photocatalytic Properties

    Yongquan Qu, Xue Teng, Xing Zhong +4

    Maqola20102 iqtibos

    ABIABI:AkademIndex/2026.other.268481

15. Photonic Nanowires: From Subwavelength Waveguides to Optical Sensors

    Xin Guo, Yibin Ying, Limin Tong

    Maqola20132 iqtibos

    ABIABI:AkademIndex/2026.other.268483

16. Temperature Measurement of a Nanowire SOI Transistor Using a Parallel Gated SOI PIN Diode

    Felipe Rodrigues Gare Carnielli, Marcelo Antonio Pavanello

    Maqola20242 iqtibos

    ABIABI:AkademIndex/2026.other.335610

17. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/2026.other.830345

18. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/2026.other.830346

19. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/2026.other.830347

20. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/2026.other.830348

21. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/2026.other.830349

22. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/2026.other.830350

23. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/2026.other.830352

24. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/2026.other.830353

25. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/2026.other.830354