Ushbu ish iqtibos qilgan ishlar

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Ish: Modeling the Impact of Incomplete Dopant Ionization on Built in Potential and C–V Characteristics of GaN p–n Junctions: A SCAPS-1D Study

1. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

   Jo`shqin Abdullayev, I. B. Sapaev

   MaqolaOAOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics202413 iqtibos

   ABIABI:AkademIndex/2024.article.000837

2. Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

   Jo`shqin Abdullayev, I. B. Sapaev

   MaqolaOAOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202513 iqtibos

   ABIABI:AkademIndex/2025.article.000607

3. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

   Jo`shqin Abdullayev

   MaqolaOAOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202512 iqtibos

   ABIABI:AkademIndex/2025.article.000647

4. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

   Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

   MaqolaOAOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202510 iqtibos

   ABIABI:AkademIndex/2025.article.000840

5. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

   Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

   MaqolaOAOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202510 iqtibos

   ABIABI:AkademIndex/2025.article.000841

6. Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects

   Jo`shqin Abdullayev, I. B. Sapaev, Jonibek Sh. Abdullayev +3

   MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20257 iqtibos

   ABIABI:AkademIndex/2025.article.001352

7. Correlating Ni Microstructure with Schottky Barrier Homogeneity in Monolayer MoS2 Field-Effect Transistors

   Maqola20257 iqtibos

   ABIABI:AkademIndex/2026.other.814856

8. Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

   J. Sh. Abdullayev, D. A. Qalandarova, M. Sh. Ibragimova +2

   MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20265 iqtibos

   ABIABI:AkademIndex/2026.article.000556

9. Impact of incomplete ionization on the critical electric field of <i>p</i> - <i>n</i> junction structures based on Si and GaAs

   J. Sh. Abdullayev, Dildora Qalandarova, M. Sh. Ibragimova

   MaqolaSilicon and Solar Cell TechnologiesLow Temperature Physics20264 iqtibos

   ABIABI:AkademIndex/2026.article.003469

10. Thermal Expansion Characteristics of Planar and Radial Si/GaAs p–n Heterojunctions

    Jonibek Sh. Abdullayev, M. Sh. Ibragimova, J. Sh. Abdullayev +1

    MaqolaOAOchiq kirishSemiconductor Quantum Structures and DevicesEast European Journal of Physics20264 iqtibos

    ABIABI:AkademIndex/2026.article.011343

11. Cryogenic Material and Electrophysical Changes in Si and GaAs

    Jonibek Sh. Abdullayev, M. Sh. Ibragimova, J. Sh. Abdullayev +1

    MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesEast European Journal of Physics20264 iqtibos

    ABIABI:AkademIndex/2026.article.011417

12. Sarlavhasiz

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    ABIABI:AkademIndex/2026.other.441603

13. Sarlavhasiz

    Boshqa3 iqtibos

    ABIABI:AkademIndex/2026.other.830351

14. Sarlavhasiz

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15. Mathematical Modeling of Electrostatic Potential in Radial and Planar p–n Junctions: A Comparative Study

    Dildora Qalandarova, M. Sh. Ibragimova, J. Sh. Abdullayev +1

    MaqolaOAOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20262 iqtibos

    ABIABI:AkademIndex/2026.article.011411

16. Sarlavhasiz

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    ABIABI:AkademIndex/2026.other.968021

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25. Sarlavhasiz

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