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Ish: Growth and structural study of (Si2)1-x(GaP)x solid solution
MBE growth of GaP on a Si substrate
M. S. Sobolev, А. А. Лазаренко, E. V. Nikitina +3
Maqola20155 iqtibosABIObtaining Si-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub>-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub> Structures from a Tin Solution-Melt in a Single Technological Cycle
A.S. Saidov, A. Sh. Razzokov, С.И. Петрушенко +1
ABIGaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates
D. S. Abramkin, М. О. Петрушков, М. А. Putyato +5
Maqola20194 iqtibosABI