Ushbu ish iqtibos qilgan ishlar

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Ish: Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure

1. Fabrication of 6H-SiC light-emitting diodes by a rotation dipping technique: Electroluminescence mechanisms

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2. High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

   Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2

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3. Temperature coefficient of the energy gap of β-silicon carbide

   Richard Dalven

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   ABIABI:AkademIndex/2026.other.381995