Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: ABI:AkademIndex/2026.other.415267

1. Features of growing Si- and Si_1-<i>x</i>Ge_<i>x</i>-single-crystal films from solution-melt based on tin

   A. Sh. Razzokov, A.S. Saidov, V. V. Girzhon +1

   MaqolaOAOchiq kirishSilicon Nanostructures and PhotoluminescenceJournal of Physical Studies20226 iqtibos

   ABIABI:AkademIndex/2022.article.000838

2. Growing Si–Si 1− x Ge x –(Ge 2 ) 1− y (GaAs) y structures in a single technological cycle

   Alijon S. Razzokov, С.И. Петрушенко, Mateusz Fijałkowski +1

   MaqolaOAOchiq kirish20260 iqtibos

   ABIABI:AkademIndex/2026.article.093420