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Ish: Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

  1. Double-injection currents in semiconductors

    É. I. Adirovich, P. M. Karageorgii-Alkalaev, A. Iu. Leiderman

    Maqola197814 iqtibos
    ABI

  2. On the theory of sublinear current-voltage characteristics of semiconductor structures

    A. Yu. Leĭderman, P. M. Karageorgy‐Alkalaev

    Maqola197812 iqtibos
    ABI

  3. Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature

    Sh. N. Usmonov, Ш. А. Мирсагатов, A. Yu. Leyderman

    MaqolaChalcogenide Semiconductor Thin FilmsSemiconductors20108 iqtibos
    ABI

  4. Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

    A.S. Saidov, Sh. N. Usmonov, M. U. Kalanov +2

    MaqolaAdvanced Surface Polishing TechniquesPhysics of the Solid State20138 iqtibos
    ABI

  5. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

    Sh. N. Usmonov, A.S. Saidov, A. Yu. Leĭderman

    MaqolaNear-Field Optical MicroscopyPhysics of the Solid State20147 iqtibos
    ABI

  6. Double-injection currents in Zn-compensated silicon pin structures

    P. M. Karageorgy‐Alkalaev, I. Z. Karimova, P. I. Knigin +1

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19767 iqtibos
    ABI

  7. Direct solar conversion to electricity nanoscale effects in pSi–n(Si2)1–x (ZnSe) x (0 ≤ x ≤ 0.01) of solar cells

    A.S. Saidov, K. A. Amonov, B. R. Kutlimurotov

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20166 iqtibos
    ABI

  8. On the magnetosensitivity of semiconductor diode structures with strong carrier accumulation

    M. S. Gilenko, P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    MaqolaSemiconductor Quantum Structures and Devicesphysica status solidi (a)19813 iqtibos
    ABI

  9. Current-voltage characteristic of n-p-p + structures based on a chromium-compensated silicon-germanium solid solution

    A.S. Saidov, A. Yu. Leĭderman, Б. Сапаев +2

    Maqola19962 iqtibos
    ABI