Ushbu ish iqtibos qilgan ishlar

13 ta ish

Ish: Physical mechanism of gettering of impurity Ni atom clusters in Si lattice

1. Nickel: A very fast diffuser in silicon

   Jeanette Lindroos, David P. Fenning, D. J. Backlund +5

   MaqolaOAOchiq kirish201323 iqtibos

   ABIABI:AkademIndex/2026.other.184730

2. Influence of electrically neutral nickel atoms on electrical and recombination parameters of silicon

   М. К. Бахадырханов, B. K. Ismaylov, С. А. Тачилин +2

   MaqolaOAOchiq kirish202012 iqtibos

   ABIABI:AkademIndex/2026.other.235263

3. Clusters of nickel atoms and controlling their state in silicon lattice

   М. К. Бахадырханов

   MaqolaOAOchiq kirishSilicon Nanostructures and PhotoluminescenceSemiconductor Physics Quantum Electronics & Optoelectronics201811 iqtibos

   ABIABI:AkademIndex/2026.other.184735

4. Radiation Stability of Nickel Doped Solar Cells

   К. А. Исмайлов, Z. T. Kenzhaev, S. Koveshnikov +2

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesPhysics of the Solid State202210 iqtibos

   ABIABI:AkademIndex/2022.article.000374

5. Suppression of harmful impurity atoms with clusters of nickel impurity atoms in a silicon lattice

   Ismaylov Bayrambay, Ismailov Kanatbay, Kamalov Khayratdin +1

   MaqolaSilicon and Solar Cell TechnologiesAIP conference proceedings20235 iqtibos

   ABIABI:AkademIndex/2026.other.384840

6. X-ray beam induced current—a synchrotron radiation based technique for the <i>in situ</i> analysis of recombination properties and chemical nature of metal clusters in silicon

   О. Ф. Вывенко, Tonio Buonassisi, A. A. Istratov +4

   Maqola20024 iqtibos

   ABIABI:AkademIndex/2026.other.500796

7. Electrophysical properties of Silicon doped by Nickel impurity using Diffusion method

   Sharifa B. Utamuradova

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesInternational Journal of Emerging Trends in Engineering Research20204 iqtibos

   ABIABI:AkademIndex/2026.other.514939

8. Sarlavhasiz

   Boshqa2 iqtibos

   ABIABI:AkademIndex/2026.other.502338

9. Sarlavhasiz

   Boshqa2 iqtibos

   ABIABI:AkademIndex/2026.other.502339

10. Long-range gettering of microdefects in silicon single crystals during the formation of porous silicon layers on their surface and ion irradiation

    V. A. Perevoshchikov, V. D. Skupov

    MaqolaSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters19991 iqtibos

    ABIABI:AkademIndex/1999.article.000058

11. Gettering of gold by samarium and gadolinium in silicon

    D. É. Nazyrov

    MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20071 iqtibos

    ABIABI:AkademIndex/2007.article.000159

12. Sarlavhasiz

    BoshqaOAOchiq kirish1 iqtibos

    ABIABI:AkademIndex/2026.other.1017880

13. Sarlavhasiz

    BoshqaOAOchiq kirish1 iqtibos

    ABIABI:AkademIndex/2026.other.1017881