Ushbu ish iqtibos qilgan ishlar

7 ta ish

Ish: The low-temperature doping of silicon by radiation-induced diffusion

1. <i>Point Defects in Metals</i>

   Arthur Damask, G. J. Dienes, R. Smoluchowski

   Maqola19643 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.390562

2. A new mechanism for interstistitial migration

   J. C. Bourgoin, J. W. Corbett

   Maqola19723 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.624020

3. Interstitial mechanism of the low-temperature gold migration in silicon

   M. A. Kaneev, A. I. Koifman, O. R. Niyazova

   MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19732 iqtibos

   ABIABI:AkademIndex/openalex/1973.article.000018

4. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.655286

5. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.655287

6. Influence of structure defects on the radiation enhanced gold diffusion in silicon

   A. I. Koifman, N. Narkulov, Marat S. Yunusov

   MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19751 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.655288

7. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.655289