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18 ta ish

Ish: Modelling of Quantum Wires in the Interface Layer of the Semiconductor-Oxide Structures with Charge Built in Oxide

  1. The history and future of semiconductor heterostructures

    Zh. I. Alfërov

    Maqola19986 iqtibos
    ABI
  2. Trap creation in silicon dioxide produced by hot electrons

    D. J. DiMaria, J. Stasiak

    Maqola19893 iqtibos
    ABI
  3. Surface Studies by Scanning Tunneling Microscopy

    G. Binnig, H. Rohrer, Ch. Gerber +1

    Maqola19822 iqtibos
    ABI
  4. The physics of SiO<sub>2</sub>layers

    J.F. Verwey, E. A. Amerasekera, J. Bisschop

    Maqola19902 iqtibos
    ABI
  5. MOS /metal oxide semiconductor/ physics and technology

    E. H. Nicollian, J.R. Brews

    Kitob19822 iqtibos
    ABI
  6. MOS (Metal Oxide Semiconductor) Physics and Technology

    K.J.S. Cave

    Maqola19832 iqtibos
    ABI
  7. Models and experiments on degradation of oxidized silicon

    C. T. Sah

    Maqola19902 iqtibos
    ABI
  8. Solution of poisson's equation in cylindrical coordinates

    M.H. Hughes

    Maqola19712 iqtibos
    ABI
  9. Sarlavhasiz

    Boshqa1 iqtibos
    ABI
  10. Sarlavhasiz

    Boshqa1 iqtibos
    ABI
  11. Sarlavhasiz

    Boshqa1 iqtibos
    ABI
  12. Sarlavhasiz

    Boshqa1 iqtibos
    ABI
  13. Sarlavhasiz

    Boshqa1 iqtibos
    ABI