Maqola

Comparison of parameters of heteroepitaxial structures

A. K. TashatovKarshi Engineering and Economics Institute, Mustakillik 225, Karshi, Kashkadarya region, 180100, UzbekistanRumiya BeytullayevaKarshi Engineering and Economics Institute, Mustakillik 225, Karshi, Kashkadarya region, 180100, UzbekistanT T UngbayevichKarshi Engineering and Economics Institute, Mustakillik 225, Karshi, Kashkadarya region, 180100, UzbekistanU A PardayevichKarshi Engineering and Economics Institute, Mustakillik 225, Karshi, Kashkadarya region, 180100, UzbekistanO YunusKarshi Engineering and Economics Institute, Mustakillik 225, Karshi, Kashkadarya region, 180100, Uzbekistan

IOP Conference Series Materials Science and Engineeringconference2020en

ABI

Annotatsiya

Abstract In this work, the structure and properties of heteroepitaxial and multilayer thin film systems obtained by thermal diffusion, MBE, and ion implantation have been comprehensively studied created.

Mavzular

Silicon and Solar Cell Technologies Ion-surface interactions and analysis Semiconductor materials and interfaces

Identifikatorlar

DOI: 10.1088/1757-899x/919/2/022006

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