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8 ta ish

Ish: Study of the critical angle of channeling of active metal ions through thin aluminum films

  1. Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

    З. А. Исаханов, Z. E. Mukhtarov, Б. Е. Умирзаков +1

    MaqolaIon-surface interactions and analysisTechnical Physics201119 iqtibos
    ABI

  2. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation

    Б. Е. Умирзаков, Д. А. Ташмухамедова, D. M. Muradkabilov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics201319 iqtibos
    ABI

  3. Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy

    Б. Е. Умирзаков, Д. А. Ташмухамедова, E.U. Boltaev +1

    MaqolaSemiconductor materials and interfacesMaterials Science and Engineering B200314 iqtibos
    ABI

  4. Analysis of profiles of atomic distribution over the depth of Si-Me free nanofilm systems

    Б. Е. Умирзаков, З. А. Исаханов, М. К. Рузибаева +2

    MaqolaSemiconductor materials and interfacesTechnical Physics20155 iqtibos
    ABI

  5. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  6. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  7. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  8. Sarlavhasiz

    Boshqa1 iqtibos
    ABI