Asosiy kontentga oʻtish
AkademIndex

Mahsulotlar

Ishlab chiquvchilar uchun

AkademBaseEkotizim uchun ochiq API
← Ishga qaytish

Ushbu ish iqtibos qilgan ishlar

24 ta ish

Ish: Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

  1. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202414 iqtibos
    ABI

  2. OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES

    Jo`shqin Abdullayev, I. B. Sapaev

    Maqola202413 iqtibos
    ABI

  3. Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors

    Renan Trevisoli, Rodrigo T. Doria, Michelly de Souza +3

    Maqola201211 iqtibos
    ABI

  4. An Explicit Quantum-Mechanical Compact Model for the <italic>I-V</italic> Characteristics of Cylindrical Nanowire MOSFETs

    Regiane Ragi, Rafael Nobrega, Ulysses Rondina Duarte +1

    Maqola201611 iqtibos
    ABI

  5. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaSemiconductor materials and interfacesEast European Journal of Physics202410 iqtibos
    ABI

  6. GaN nanowire ultraviolet photodetector with a graphene transparent contact

    A. V. Babichev, H. Zhang, Pierre Lavenus +5

    Maqola201310 iqtibos
    ABI

  7. Fabrication and studies on Si/InP core-shell nanowire based solar cell using etched Si nanowire arrays

    Biswajit Pal, Kalyan Jyoti Sarkar, P. Banerji

    Maqola201910 iqtibos
    ABI

  8. Some Electrophysical Properties of Polycrystalline Silicon Obtained in a Solar Oven

    L. O. Olimov, Iqboljon Ibroximovich Anarboyev

    MaqolaSilicon Nanostructures and PhotoluminescenceSilicon202210 iqtibos
    ABI

  9. Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

    I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5

    MaqolaChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20239 iqtibos
    ABI

  10. Modeling and calibration of electrical features of p-n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaSemiconductor materials and interfacesPhysical Sciences and Technology20249 iqtibos
    ABI

  11. Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures

    Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev

    MaqolaSemiconductor Quantum Structures and DevicesLow Temperature Physics20259 iqtibos
    ABI

  12. Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

    Dharmapura H. K. Murthy, Tao Xu, Wanghua Chen +11

    Maqola20119 iqtibos
    ABI

  13. Improvement of carrier ballisticity in junctionless nanowire transistors

    Nima Dehdashti Akhavan, Isabelle Ferain, Pedram Razavi +2

    Maqola20119 iqtibos
    ABI

  14. A GaAs Nanowire Array Solar Cell With 15.3% Efficiency at 1 Sun

    Ingvar Åberg, Giuliano Vescovi, Damir Asoli +8

    Maqola20159 iqtibos
    ABI

  15. Electrical and optical properties of nanowires based solar cell with radial p-n junction

    O. V. Pylypova, А.А. Еvtukh, P.V. Parfenyuk +4

    Maqola20198 iqtibos
    ABI

  16. Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 iqtibos
    ABI

  17. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

    Jo`shqin Abdullayev

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 iqtibos
    ABI

  18. Controlled Doping Methods for Radial p/n Junctions in Silicon

    Rick Elbersen, Roald M. Tiggelaar, Alexander Milbrat +3

    Maqola20147 iqtibos
    ABI

  19. Theory of the Junctionless Nanowire FET

    Elena Gnani, A. Gnudi, Susanna Reggiani +1

    Maqola20116 iqtibos
    ABI

  20. ENHANCEMENT OF POWER CONVERSION EFFICIENCY OF DYE-SENSITIZED SOLAR CELLS VIA INCORPORATION OF GAN SEMICONDUCTOR MATERIAL SYNTHESIZED IN HOT-WALL CHEMICAL VAPOR DEPOSITION FURNACE

    Olzat Toktarbaiuly

    Maqola20246 iqtibos
    ABI

  21. Mechanism of thermoelectric material efficiency increase

    Iqboljon Anarboyev, L. O. Olimov

    MaqolaAdvanced Thermoelectric Materials and DevicesAIP conference proceedings20242 iqtibos
    ABI

  22. Study of the Inhomogeneities of Overcompensed Silicon Samples Doped with Manganese

    M. Sh. Isaev, U. T. Asatov, Makhmudjon A. Tulametov +2

    Maqola20242 iqtibos
    ABI

  23. Study of Silicide Formation in Large Diameter Monocrystalline Silicon

    A. T. Mamadalimov, Makhmudkhodja Sh. Isaev, Mukhammadsodik N. Mamatkulov +2

    MaqolaSilicon and Solar Cell TechnologiesEast European Journal of Physics20242 iqtibos
    ABI

  24. The Surface Layer Morphology of Si&lt;Cr&gt; Samples

    M. Sh. Isaev, A.I. Khudayberdieva, Mukhammadsodik N. Mamatkulov +2

    Maqola20242 iqtibos
    ABI