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Ish: Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects

Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures
Jo`shqin Abdullayev, I. B. Sapaev
MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202414 iqtibos
ABI
OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES
Jo`shqin Abdullayev, I. B. Sapaev
Maqola202413 iqtibos
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Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures
Jo`shqin Abdullayev, I. B. Sapaev
MaqolaSemiconductor materials and interfacesEast European Journal of Physics202410 iqtibos
ABI
Modeling and calibration of electrical features of p-n junctions based on Si and GaAs
Jo`shqin Abdullayev, I. B. Sapaev
MaqolaSemiconductor materials and interfacesPhysical Sciences and Technology20249 iqtibos
ABI
Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures
Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev
MaqolaSemiconductor Quantum Structures and DevicesLow Temperature Physics20259 iqtibos
ABI
Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration
Jo`shqin Abdullayev, I. B. Sapaev
MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 iqtibos
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Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions
Jo`shqin Abdullayev
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ABI
Regularized Solution of the Cauchy Problem in an Unbounded Domain
Davron Aslonqulovich Juraev, Ali Shokri, Daniela Marian
Maqola20227 iqtibos
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Potential distribution over temperature sensors of p-n junction diodes with arbitrary doping of the base region
R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +6
MaqolaAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences20236 iqtibos
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ENHANCEMENT OF POWER CONVERSION EFFICIENCY OF DYE-SENSITIZED SOLAR CELLS VIA INCORPORATION OF GAN SEMICONDUCTOR MATERIAL SYNTHESIZED IN HOT-WALL CHEMICAL VAPOR DEPOSITION FURNACE
Olzat Toktarbaiuly
Maqola20246 iqtibos
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Solution of the Ill-Posed Cauchy Problem for Systems of Elliptic Type of the First Order
Davron Aslonqulovich Juraev, Ali Shokri, Daniela Marian
Maqola20226 iqtibos
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Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration
Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2
MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 iqtibos
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The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs
Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov
MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 iqtibos
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Si microwire-array solar cells
Morgan C. Putnam, Shannon W. Boettcher, Michael D. Kelzenberg +6
Maqola20105 iqtibos
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Coverage properties of silicon nitride film prepared by the Cat-CVD method
S. Osono, Y. Uchiyama, Makiko Kitazoe +5
Maqola20033 iqtibos
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Silicon Nanowires for Photovoltaic Solar Energy Conversion
Kui‐Qing Peng, Shuit‐Tong Lee
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Silicon Nanowires Synthesis by Metal-Assisted Chemical Etching: A Review
Antonio Alessio Leonardi, Maria José Lo Faro, Alessia Irrera
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Temperature Measurement of a Nanowire SOI Transistor Using a Parallel Gated SOI PIN Diode
Felipe Rodrigues Gare Carnielli, Marcelo Antonio Pavanello
Maqola20242 iqtibos
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