Asosiy kontentga oʻtish
AkademIndex

Mahsulotlar

Ishlab chiquvchilar uchun

AkademBasetez oradaEkotizim uchun ochiq API
← Ishga qaytish

Ushbu ish iqtibos qilgan ishlar

16 ta ish

Ish: The Influence of γ-Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Grown by the Czochralski Method

  1. Radiation Stability of Nickel Doped Solar Cells

    К. А. Исмайлов, Z. T. Kenzhaev, S. Koveshnikov +2

    MaqolaSilicon and Solar Cell TechnologiesPhysics of the Solid State20229 iqtibos
    ABI

  2. Clusters of nickel atoms and controlling their state in silicon lattice

    М. К. Бахадырханов

    MaqolaSilicon Nanostructures and PhotoluminescenceSemiconductor Physics Quantum Electronics & Optoelectronics20189 iqtibos
    ABI

  3. Influence of electrically neutral nickel atoms on electrical and recombination parameters of silicon

    М. К. Бахадырханов, B. K. Ismaylov, С. А. Тачилин +2

    Maqola20209 iqtibos
    ABI

  4. Nickel solubility in intrinsic and doped silicon

    A. A. Istratov, P. Zhang, R. J. McDonald +6

    Maqola20045 iqtibos
    ABI

  5. Interaction of radiation defects with nickel atom clusters in silicon

    Х. М. Илиев, Z.M. Saparniyazova, К. А. Исмайлов +2

    MaqolaGraphite, nuclear technology, radiation studiesSurface Engineering and Applied Electrochemistry20115 iqtibos
    ABI

  6. Effect of nickel on the lifetime of charge carriers in silicon solar cells

    Bakhadyrkhanov M.K., Kenzhaev Z.T., S. Koveshnikov +2

    MaqolaSilicon and Solar Cell TechnologiesФизика и техника полупроводников20225 iqtibos
    ABI

  7. Transition metals in silicon

    Eicke R. Weber

    Maqola19834 iqtibos
    ABI

  8. Energy levels of vacancies and interstitial atoms in the band gap of silicon

    V. V. Lukjanitsa

    Maqola20034 iqtibos
    ABI

  9. Thermal stability of electrical parameters of silicon crystal doped with nickel during growth

    M.K. Bakhadyrkhanov, Kanatbay A. Ismailov, E.Zh. Kosbergenov

    Maqola20223 iqtibos
    ABI

  10. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

    Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

    MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20242 iqtibos
    ABI

  11. Ti, Fe, and Ni in Si and their interactions with the vacancy and the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>A</mml:mi></mml:math>center: A theoretical study

    D. J. Backlund, S. K. Estreicher

    Maqola20102 iqtibos
    ABI

  12. On the problem of Watkins substitution and migration of silicon atoms in silicon

    N. I. Berezhnov, A. R. Chelyadinskiĭ, M. Jadan +1

    Maqola19932 iqtibos
    ABI

  13. The Effect of Gamma Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Solar Cells

    Z. T. Kenzhaev, Х. М. Илиев, В. Б. Оджаев +6

    MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20241 iqtibos
    ABI

  14. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  15. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  16. Sarlavhasiz

    Boshqa1 iqtibos
    ABI