Maqola

Defect Formation and Displacement of Atoms on the Surface of a LiF Crystal under Bombardment with Low-Energy Cesium Ions

Utkirjon SharopovBukhara State University, 20008, Bukhara, UzbekistanO. A. AbdulkhaevPhysical-Technical Institute, Uzbekistan Academy of Sciences, 100084, Tashkent, UzbekistanБ. Э. ЭгамбердиевPhysical-Technical Institute, Uzbekistan Academy of Sciences, 100084, Tashkent, UzbekistanK. A. SamievBukhara State University, 20008, Bukhara, UzbekistanN. M. NazarovaBukhara State University, 20008, Bukhara, UzbekistanМ. К. КурбановUrgench State University, 220100, Urgench, UzbekistanМ. K. KаrimovUrgench State University, 220100, Urgench, UzbekistanDilmurod SaidovUrgench branch of the Tashkent University of Information Technologies, 220100, Urgench, UzbekistanZafar IskandarovTashkent State Agrarian University, 111218, Tashkent, UzbekistanSokhib IslamovTashkent State Agrarian University, 111218, Tashkent, UzbekistanAlisher KakhramonovInstitute of Materials Science, 102226, Tashkent, UzbekistanOdiljon AbdurakhmonovTashkent Institute of Chemical Technology, 100011, Tashkent, UzbekistanИ. А. ПронинPenza State University, 440026, Penza, RussiaА. S. KomolovSt. Petersburg State University, 1999034, St. Petersburg, Russia

Journal of Surface Investigation X-ray Synchrotron and Neutron Techniquesjournal2024en

ABI

Annotatsiya

Ion beam technology is an excellent tool for changing and investigating the structural and surface properties of crystals. In this paper, the possibility of modifying the surface of a thin LiF film under irradiation with low-energy Cs ions with an energy of 1 keV using the SRIM software method is investigated. The results of the study show that the average range of cesium ions is 51 Å, and the average surface binding energy is 2.8 eV. Due to the transfer and distribution of the energy of bombarding ions to the atomic lattice and as a result of the displacement of the lattice atoms from their initial positions, it is possible to obtain the value of displacement defects. The defect formation profile was investigated depending on DPA, which implies that the maximum peaks of defect displacement for LiF are at a crystal depth of 16 Å from the surface.

Mavzular

Ion-surface interactions and analysis Nuclear materials and radiation effects Semiconductor materials and devices

Identifikatorlar

DOI: 10.1134/s1027451024702215

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