Maqola

Reflection z‐scan measurements of opaque semiconductor thin films

R. A. GaneevNPO Akadempribor, Akademgorodok, Tashkent 700125, UzbekistanA.I. RyasnyanskyInstitut des Nano-Sciences de Paris, CNRS, Université Pierre et Marie Curie, Case 80, 140 rue de Lourmel, 75015 Paris, France

physica status solidi (a)journal2004en

ABI

Annotatsiya

Abstract We studied the nonlinear refraction of semiconductor thin films (3As 2 S 3 /As 2 Se 3 and CdS) at the wavelength of 532 nm using the reflection z‐scan technique (RZ‐scan). The values of nonlinear refractive indices γ of 3As 2 S 3 /As 2 Se 3 and CdS were calculated to be 5 × 10 –10 cm 2 W –1 and –5.2 × 10 –11 cm 2 W –1 . The comparison of RZ‐scans and transmission z‐scans was carried out for CdS film. The sign of nonlinear refraction of these chalcogenides was discussed in the framework of Kramers–Kronig transformations. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Mavzular

Nonlinear Optical Materials Studies Quantum Dots Synthesis And Properties Chalcogenide Semiconductor Thin Films

Identifikatorlar

DOI: 10.1002/pssa.200406896

Iqtiboslar va manbalar

2 ta iqtibos 18 ta foydalanilgan manba

Koʻrsatkichlar — AkademScholar · Tez orada