Reflection z‐scan measurements of opaque semiconductor thin films
R. A. GaneevNPO Akadempribor, Akademgorodok, Tashkent 700125, UzbekistanA.I. RyasnyanskyInstitut des Nano-Sciences de Paris, CNRS, Université Pierre et Marie Curie, Case 80, 140 rue de Lourmel, 75015 Paris, France
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Аннотация
Abstract We studied the nonlinear refraction of semiconductor thin films (3As 2 S 3 /As 2 Se 3 and CdS) at the wavelength of 532 nm using the reflection z‐scan technique (RZ‐scan). The values of nonlinear refractive indices γ of 3As 2 S 3 /As 2 Se 3 and CdS were calculated to be 5 × 10 –10 cm 2 W –1 and –5.2 × 10 –11 cm 2 W –1 . The comparison of RZ‐scans and transmission z‐scans was carried out for CdS film. The sign of nonlinear refraction of these chalcogenides was discussed in the framework of Kramers–Kronig transformations. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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