← Ishga qaytish
Ushbu ishga iqtibos qilgan ishlar
4 ta ish
Ish: The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+
Mahsulotlar
Ishlab chiquvchilar uchun
AkademBaseEkotizim uchun ochiq API4 ta ish
Ish: The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+