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9 ta ish

Ish: Structural Peculiarities of the (ZnSe)1 – x – y(Ge2)x(GaAs1 – δBiδ)y Solid Solution with Various Nanoinclusions

  1. X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals

    I. L. Shul’pina, R. N. Kyutt, В. В. Ратников +3

    Maqola20109 iqtibos
    ABI

  2. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +4

    MaqolaChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20118 iqtibos
    ABI

  3. Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

    S.Z. Zaynabidinov, A.S. Saidov, A. Yu. Leĭderman +4

    MaqolaSemiconductor Quantum Structures and DevicesSemiconductors20165 iqtibos
    ABI

  4. Features of the Properties of the Surface of (GaAs)1 – x – у(Ge2)x(ZnSe)y Semiconductor Solid Solution with ZnSe Quantum Dots

    С. З. Зайнабидинов, A.S. Saidov, Akramjon Y. Boboev +1

    MaqolaSemiconductor Quantum Structures and DevicesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20214 iqtibos
    ABI

  5. Photosensitivity of pSi-n(Si2)1–x–y(Ge2) x (ZnSe) y heterostructures with quantum dots

    A.S. Saidov, Sh. N. Usmonov, K. A. Amonov +2

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20174 iqtibos
    ABI

  6. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  7. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  8. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  9. Sarlavhasiz

    Boshqa1 iqtibos
    ABI