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9 ta ish

Ish: Analysis of InGaP(001) surface by the low energy ion scattering spectroscopy

  1. Sarlavhasiz

    Boshqa19 iqtibos
    ABI

  2. Energy Threshold of the Atomic and Cluster Sputtering of Some Elements under Bombardment with Cs, Rb, and Na Ions

    R. Djabbarganov, Б.Г. Атабаев, З. А. Исаханов +1

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201914 iqtibos
    ABI

  3. Defect Formation on the Surface of ZnO Using Low-Energy Electrons

    Utkirjon Sharopov, Б.Г. Атабаев, R. Djabbarganov

    MaqolaZnO doping and propertiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques202011 iqtibos
    ABI

  4. Computer Simulation of Scattering Xe<sup>+</sup> Ions from InP(001)❬110❭ Surface at Grazing Incidence

    Karimov Mukhtorjon Karimberganovich, Matchоnov Khusniddin Jamoladdinovich, Otaboeva Kamola Uchkun qizi +1

    MaqolaIon-surface interactions and analysise-Journal of Surface Science and Nanotechnology201911 iqtibos
    ABI

  5. Orientation Effects during Scattering of Ar+ Ions from the InP(001) Surface under Grazing-Angle Ion Bombardment

    Uchkun Kutliev, М. K. Kаrimov, Mexroj Otaboev

    MaqolaIon-surface interactions and analysisInorganic Materials Applied Research202010 iqtibos
    ABI

  6. Low Energy Ar<sup>+</sup> Ion Scattering on InGaP(001) Surface

    Karimov Mukhtorjon Karimberganovich, Kutliev Uchkun Otoboyevich, Ismailov Shavkat Ko'ziyevich +1

    MaqolaIon-surface interactions and analysise-Journal of Surface Science and Nanotechnology20207 iqtibos
    ABI

  7. Angular Distributions of Scattered Ne and Ar Ions at the Grazing Incidence on the InGaP (001) 110 Surface

    М. K. Kаrimov, Uchkun Kutliev, Kamola Otabaeva +1

    MaqolaRadiation Detection and Scintillator TechnologiesJournal of Nano- and Electronic Physics20206 iqtibos
    ABI

  8. 8 W continuous wave front-facet power from broad-waveguide Al-free 980 nm diode lasers

    L. J. Mawst, Arnab Bhattacharya, J. Lopez +7

    Maqola19962 iqtibos
    ABI

  9. High-current-gain Ga/sub 0.51/In/sub 0.49/P/GaAs heterojunction bipolar transistor grown by gas-source molecular beam epitaxy

    Shey‐Shi Lu, Chibing Huang

    Maqola19922 iqtibos
    ABI