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Ish: Design optimization of nanoscale electrothermal transport in 10 nm SOI FinFET technology node

1. Optimization of vertically stacked nanosheet FET immune to self-heating

   M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

   MaqolaSemiconductor materials and devicesMicro and Nanostructures20235 iqtibos

   ABIABI:AkademIndex/openalex/2023.article.001165

2. A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor

   A. É. Atamuratov, D. R. Rajapov, M. M. Khalilloev +3

   MaqolaAdvancements in Semiconductor Devices and Circuit DesignSilicon20251 iqtibos

   ABIABI:AkademIndex/openalex/2025.article.001842

3. Impact of the gate oxide material composition on the self-heating and short channel effects in nanosheet field effect transistor

   A.E. Atamuratov, D. R. Rajapov, M. M. Khalilloev +2

   PreprintAdvancements in Semiconductor Devices and Circuit DesignResearch Square20260 iqtibos

   ABIABI:AkademIndex/openalex/2026.preprint.001199