Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1− x(ZnSe)x, Ge-(Ge2)1−x(ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x(ZnSe)x

1. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

   Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

   MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20235 iqtibos

   ABIABI:AkademIndex/openalex/2023.article.001403

2. Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

   С. З. Зайнабидинов, A.S. Saidov, M. U. Kalanov +1

   MaqolaSemiconductor materials and interfacesApplied Solar Energy20192 iqtibos

   ABIABI:AkademIndex/openalex/2019.article.000285