Ushbu ishga iqtibos qilgan ishlar

4 ta ish

Ish: Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate

1. Features of the Properties of the Surface of (GaAs)1 – x – у(Ge2)x(ZnSe)y Semiconductor Solid Solution with ZnSe Quantum Dots

   С. З. Зайнабидинов, A.S. Saidov, Akramjon Y. Boboev +1

   MaqolaSemiconductor Quantum Structures and DevicesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20214 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.238420

2. Photosensitivity of pSi-n(Si2)1–x–y(Ge2) x (ZnSe) y heterostructures with quantum dots

   A.S. Saidov, Sh. N. Usmonov, K. A. Amonov +2

   MaqolaSemiconductor materials and interfacesApplied Solar Energy20174 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.392482

3. Structure, Morphology and Photoelectric Properties of n-GaAs--p-(GaAs)1--x(Ge2)х Heterostructure

   S.Z. Zaynabidinov, A.S. Saidov, Akramjon Y. Boboev +1

   MaqolaSemiconductor materials and interfacesHerald of the Bauman Moscow State Technical University Series Natural Sciences20222 iqtibos

   ABIABI:AkademIndex/openalex/2022.article.001009

4. On the Method of Calculation of the Photocurrent in Structures with Periodically Positioned Nanoinclusions

   R. A. Ayukhanov

   MaqolaSemiconductor Quantum Structures and DevicesApplied Solar Energy20180 iqtibos

   ABIABI:AkademIndex/openalex/2018.article.000964