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13 ta ish

Ish: Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties

  1. Sarlavhasiz

    Boshqa1117 iqtibos
    ABI

  2. Double-injection currents in semiconductors

    É. I. Adirovich, P. M. Karageorgii-Alkalaev, A. Iu. Leiderman

    Maqola197814 iqtibos
    ABI

  3. THE THEORY OF X-RAY SCATTERING

    Bob20155 iqtibos
    ABI

  4. Surfactant-mediated growth of Si 1-x Sn x layers by molecular-beam epitaxy

    M. F. Fyhn, J. Lundsgaard Hansen, J. Chevallier +1

    Maqola19993 iqtibos
    ABI

  5. Direct energy gap group IV semiconductor alloys and quantum dot arrays in SnxGe1−x/Ge and SnxSi1−x/Si alloy systems

    Regina Ragan, Kyu Sung Min, Harry A. Atwater

    Maqola20013 iqtibos
    ABI

  6. Structure and photoelectric properties of Si1 − x Sn x epilayers

    A.S. Saidov, Sh. N. Usmonov, M. U. Kalanov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics Letters20103 iqtibos
    ABI

  7. The Pressure Effect on the Phase Diagrams of the GeSn and SiSn Systems

    T. Soma, K. Kamada, H.‐Matsuo Kagaya

    Maqola19882 iqtibos
    ABI

  8. Characterization of Ge-on-Si virtual substrates and single junction GaAs solar cells

    R. Ginige, Brian Corbett, M. Modreanu +5

    Maqola20062 iqtibos
    ABI

  9. Monolithic CMOS-compatible AlGaInP visible LED arrays on silicon on lattice-engineered substrates (SOLES)

    Kamesh Chilukuri, M. Mori, Carl L. Dohrman +1

    Maqola20062 iqtibos
    ABI

  10. Liquid phase epitaxy of Ge1−xSnx semiconductor films

    A.S. Saidov, A. Sh. Razzakov, É. A. Koshchanov

    MaqolaPhotonic and Optical DevicesTechnical Physics Letters20012 iqtibos
    ABI

  11. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  12. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  13. Sarlavhasiz

    Boshqa1 iqtibos
    ABI