Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: Light-induced resistive switching in silicon-based metal–insulator–semiconductor structures

1. Composition and Structure of Ga1 – xNa x As Nanolayers Produced near the GaAs Surface by Na+ Implantation

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2. Effect of the Angle of Incidence of Low-Energy Ar+ Ion Beams on the Composition and Structure of the GaAs Surface

   Д. А. Ташмухамедова, Б. Е. Умирзаков, Z. A. Tursunmetova

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