Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: Mechanism of contact resistance formation in ohmic contacts with high dislocation density

1. Features of the Formation of Ohmic Contacts to n+-InN

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   MaqolaGaN-based semiconductor devices and materialsUkrainian Journal of Physics20190 iqtibos

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2. Influence of heating of charge carriers on the contact resistance of the Schottky barrier

   G. Gulyamov, Q. Umarov, Alisher Z. Soliyev +1

   MaqolaSemiconductor materials and interfacesAIP conference proceedings20240 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.003180