Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: Transient Response of a <i>p-n</i> Junction

1. Growth and properties of single crystals of Si1 − x Ge x (0 &lt; x &lt; 0.35) solid solutions

   I. G. Atabaev, N. A. Matchanov, M. U. Khazhiev +1

   MaqolaSilicon and Solar Cell TechnologiesTechnical Physics Letters20101 iqtibos

   ABIABI:AkademIndex/openalex/2010.article.000289

2. Influence of Extended Structural Defects on the Characteristics of Electroluminescence in Efficient Silicon Light-Emitting Diodes

   Н. А. Соболев, A. M. Emel’yanov, E. I. Shek +1

   MaqolaSilicon Nanostructures and PhotoluminescenceDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20030 iqtibos

   ABIABI:AkademIndex/openalex/2003.article.000127