Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: Epitaxial growth of Si on (1012) Al2O3 by partially ionized vapor deposition

1. Ion bombardment effect on Si homoepitaxial growth from ion molecular beams

   T.S. Pugacheva, М. С. Саидов, A. S. Lutovich

   MaqolaIon-surface interactions and analysisRadiation Effects19871 iqtibos

   ABIABI:AkademIndex/openalex/1987.article.000061

2. “Radiation Sieve” Effect during Epitaxy from Low Energy Ion-Molecular Flow

   A. Budrevich, A. Lyutovich, Б. Л. Оксенгендлер

   MaqolaGeological and Geochemical Analysisphysica status solidi (a)19891 iqtibos

   ABIABI:AkademIndex/openalex/1989.article.000071