Ushbu ishga iqtibos qilgan ishlar

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Ish: Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K

1. Current Mechanisms in Zinc Diffusion-Doped Silicon Samples at T = 300 K

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   MaqolaSemiconductor materials and interfacesEast European Journal of Physics20240 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.010089

2. Current Mechanisms in Zinc Diffusion-doped Silicon Samples at T = 300 K

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   ABIABI:AkademIndex/openalex/2024.preprint.000148