Ushbu ishga iqtibos qilgan ishlar

3 ta ish

Ish: Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors

1. Effect of Dysprosium Atoms Introduced During the Growth Phase on the Formation of Radiation Defects in Silicon Crystals

   Kh.S. Daliev, Sharifa B. Utamuradova, Shakhrukh Kh. Daliev +2

   MaqolaSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 iqtibos

   ABIABI:AkademIndex/openalex/2025.article.009030

2. Impedance spectra of rhodium-doped silicon irradiated with alpha particles

   Sharifa B. Utamuradova, D.A. Rakhmanov, A.S. Doroshkevich +3

   MaqolaSilicon and Solar Cell TechnologiesRadiation Physics and Chemistry20260 iqtibos

   ABIABI:AkademIndex/openalex/2026.article.010369

3. Raman Spectoroscopy of Silicon Single Crystals, Doped with Palladium and Irradiated by GammaRays

   Sharifa B. Utamuradova, Dilmurod A. Rakhmanov, A.S. Abiyev

   MaqolaSilicon and Solar Cell TechnologiesJournal of Ovonic Research20260 iqtibos

   ABIABI:AkademIndex/openalex/2026.article.010786