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Vitalii V. Kozlovski

12 works

St Petersburg State Polytechnical University, St Petersburg 195251, Russia

  1. Positron annihilation on defects in silicon irradiated with 15 MeV protons

    N.Yu. Arutyunov, Mohamed Elsayed, R. Krause‐Rehberg +3

    ArticleMuon and positron interactions and applicationsJournal of Physics Condensed Matter20121 citations
    ABI

  2. Positron probing of open vacancy volume of phosphorus‐vacancy complexes in float‐zone n‐type silicon irradiated by 0.9‐MeV electrons and by 15‐MeV protons

    N.Yu. Arutyunov, V. V. Emtsev, Mohamed Elsayed +4

    ArticleMuon and positron interactions and applicationsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics20171 citations
    ABI

  3. Monovacancy–As complexes in proton-irradiated Ge studied by positron lifetime spectroscopy

    Mohamed Elsayed, N.Yu. Arutyunov, R. Krause‐Rehberg +3

    ArticleMuon and positron interactions and applicationsActa Materialia20141 citations
    ABI

  4. Positron probing of phosphorus-vacancy complexes in silicon irradiated with 15 MeV protons

    N.Yu. Arutyunov, V. V. Emtsev, R. Krause‐Rehberg +4

    ArticleMuon and positron interactions and applicationsJournal of Physics Conference Series20151 citations
    ABI

  5. Positron probing of disordered regions in neutron‐irradiated silicon

    N.Yu. Arutyunov, Nick S. Bennett, Neil M. Wight +4

    ArticleMuon and positron interactions and applicationsphysica status solidi (b)20161 citations
    ABI

  6. Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN

    V. V. Emtsev, V. Yu. Davydov, I. N. Goncharuk +7

    ArticleGaN-based semiconductor devices and materialsMaterials science forum19970 citations
    ABI

  7. Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation

    A. А. Lebedev, D. V. Davydov, Anatoly M. Strel’chuk +4

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 citations
    ABI

  8. Radiation Hardness of Silicon Carbide

    A. А. Lebedev, Vitalii V. Kozlovski, N. B. Strokan +4

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 citations
    ABI

  9. Modification of the Silicon Carbide by Proton Irradiation

    Е. В. Богданова, Vitalii V. Kozlovski, D. S. Rumyantsev +2

    ArticleSilicon and Solar Cell TechnologiesMaterials science forum20040 citations
    ABI

  10. Influence of Irradiation on Excess Currents in SiC pn Structures

    Anatoly M. Strel’chuk, Vitalii V. Kozlovski, A. А. Lebedev +1

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20050 citations
    ABI

  11. Formation and annealing of vacancy-P complexes in proton-irradiated germanium

    Mohamed Elsayed, N.Yu. Arutyunov, R. Krause‐Rehberg +2

    ArticleMuon and positron interactions and applicationsActa Materialia20150 citations
    ABI

  12. Effect of Electron Irradiation on Electrical and Electroluminescent Properties of n<sup>+</sup>p 4H-SiC Structures

    Anatoly M. Strel’chuk, A. E. Kalyadin, A. А. Lebedev +3

    ArticleSemiconductor materials and devicesMaterials science forum20180 citations
    ABI