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Ш. А. Мирсагатов

43 works

National University of Uzbekistan, Tashkent, Uzbekistan

  1. Effect of fast neutron irradiation on ITO / p-CdTe structures

    Ш. А. Мирсагатов, Makhmudov, J. Janarbergenov

    ArticleAdvanced Semiconductor Detectors and Materials20010 citations
    ABI

  2. Cadmium telluride thin-film detectors of nuclear radiation

    B. N. Zaveryukhin, Ш. А. Мирсагатов, N. N. Zaveryukhina +2

    ArticleAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters20030 citations
    ABI

  3. Radiation-stimulated processes in CdTe solar cells

    Zh. Zhanabergenov, Ш. А. Мирсагатов, Smagul Karazhanov

    ArticleChalcogenide Semiconductor Thin FilmsTechnical Physics Letters20030 citations
    ABI

  4. Effect of γ-irradiation on properties of polycrystalline cadmium telluride base p-n-p structure

    Zh. Zhanabergenov, Ш. А. Мирсагатов, Smagul Karazhanov +1

    ArticleAdvanced Semiconductor Detectors and Materials20030 citations
    ABI

  5. Radiation-stimulated processes in CdTe solar elements

    Zh. Zhanabergenov, Ш. А. Мирсагатов, Smagul Karazhanov

    ArticleAdvanced Semiconductor Detectors and Materials20030 citations
    ABI

  6. Effect of γradiation on photo electrical properties of n-CdS-p-CdTe solar cells

    C.A. Muzaffarova, J. Janabergenov, Ш. А. Мирсагатов +1

    ArticleChalcogenide Semiconductor Thin Films20030 citations
    ABI

  7. Effect of γ radiation on electro-physical properties of p-CdTe-n-CdS-p-CdTe structures

    C.A. Muzaffarova, J. Janabergenov, Ш. А. Мирсагатов

    ArticleAdvanced Semiconductor Detectors and Materials20030 citations
    ABI

  8. The structure and morphology of Cd Te polycrystalline films

    Ш. А. Мирсагатов, S. A. Muzafarova, А. Х. Шукуров

    ArticleAdvanced Semiconductor Detectors and Materials20040 citations
    ABI

  9. Operating optimization of photoreceivers made of Zn x Cd 1-x S solid solution in a valve mode

    B.U. Aytbaev, Makhmudov, Ш. А. Мирсагатов

    ArticleChalcogenide Semiconductor Thin Films20040 citations
    ABI

  10. Dynamics of the defects recharging in coarse-grained p-CdTe films

    Kh. Kh. Ismailov, Zh. Zhanabergenov, Ш. А. Мирсагатов +1

    ArticleAdvanced Semiconductor Detectors and MaterialsSemiconductors20060 citations
    ABI

  11. Investigation of the interfacial layer in nCdS/pCdTe heterostructure

    S. A. Muzafarova, B.U. Aytbaev, Ш. А. Мирсагатов +1

    ArticleAdvanced Semiconductor Detectors and Materials20060 citations
    ABI

  12. The photoluminescence of p-CdTe columnar films

    Kh. Kh. Ismoilov, A. M. Abdugafurov, С. Х. Шамирзаев +2

    ArticleAdvanced Semiconductor Detectors and MaterialsUzbekiston Fizika Zhurnali20070 citations
    ABI

  13. Some peculiarities of current-voltage characteristics of nCdS-pCdTe-heterostructures with intermediate layer of d ≅ 1 μ m

    S. A. Muzafarova, Ш. А. Мирсагатов, A. Yu. Leĭderman +2

    ArticleChalcogenide Semiconductor Thin FilmsUzbekiston Fizika Zhurnali20090 citations
    ABI

  14. The new detectors with Schottky barrier on the base of cadmium telluride and their some characteristics

    Ш. А. Мирсагатов, Baiev, B. N. Zaveryukhin +1

    ArticleAdvanced Semiconductor Detectors and Materials20100 citations
    ABI

  15. Research of the real structure of the diode with barrier Schottky Al-pCdTe

    Ш. А. Мирсагатов, S. A. Muzafarova, Baiev +1

    ArticleAdvanced Semiconductor Detectors and MaterialsUzbekiston Fizika Zhurnali20100 citations
    ABI

  16. The photosensitive structure CdTe/TeO 2 /CdO on the basis of CdTe film and thin oxide layer CdO synthesized by a magnetron-ionic dispersion method

    S. A. Muzafarova, Ш. А. Мирсагатов, Makhmudov +1

    ArticleChalcogenide Semiconductor Thin FilmsUzbekiston Fizika Zhurnali20110 citations
    ABI

  17. Cascade Injection Photodetector for the 500−650-nm Spectral Range on the Basis of Solid Solutions of A2B6 Compounds

    Ш. А. Мирсагатов, B. N. Zaveryukhin, O. K. Ataboev +1

    ArticleSemiconductor materials and interfacesUkrainian Journal of Physics20130 citations
    ABI

  18. Influence of ultrasonic irradiation on the output parameters of photosensitive In–n +CdS–nCdS x Te1–x –pZnxCd1–x Te–Mo heterostructure

    Ш. А. Мирсагатов, O. K. Ataboev, M. A. Makhmudov +1

    ArticleChalcogenide Semiconductor Thin FilmsApplied Solar Energy20160 citations
    ABI