Article

Effect of the degree of compensation of sulfur impurity levels on the photoconductivity of silicon near 10.6 µm

G. B. GorlinTashkent State University, 700095, Tashkent, UzbekistanV. T. TulanovTashkent State University, 700095, Tashkent, UzbekistanKh. B. SiyabekovTashkent State University, 700095, Tashkent, Uzbekistan

Technical Physicsjournal1997en

ABI

Abstract

The effect of the degree of compensation of the impurity levels in Si〈S〉 on the photoconductivity near 10.6 µm has been investigated experimentally. A theoretical calculation for a one-level system with different degrees of compensation and for two values of the activation energy (ΔE) established that at least two impurity levels participate in 10.6-µm photoconductivity.

Topics

Semiconductor materials and interfaces Silicon and Solar Cell Technologies Silicon Nanostructures and Photoluminescence

Identifiers

DOI: 10.1134/1.1258810

Citations and references

Cited by 06 references

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