Article

Optical FET output characteristics research in light-activated mode

D. M. YodgorovaPhysical-Technical Institute of the Scientific Association “Physics-Sun” of the Academy of Sceinces of the Republic of Uzbekistan, Tashkent, Uzbekistan

Radioelectronics and Communications Systemsjournal2008en

ABI

Abstract

This paper deals with researches of output characteristics of a field-controlled phototransistor with light excitation in a light-activated mode. Optical signal transformation mechanisms in a channel are determined, considering processes in a drain-gate junction. Criteria of base region effective modulation are specified. Obtained results can be used in design of new generation transistors.

Topics

Semiconductor Lasers and Optical Devices Photonic and Optical Devices Semiconductor Quantum Structures and Devices

Identifiers

DOI: 10.3103/s0735272708100087

Citations and references

Cited by 02 references

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