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Works cited by this work

42 works

Work: Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

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    Other1 citations
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  4. Growth and photosensitivity of pSi-n(GaSb)1 − x (Si2) x structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2

    ArticleSemiconductor materials and interfacesApplied Solar Energy20071 citations
    ABI

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    Other1 citations
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  10. The synthesis and properties of epitaxial layers of (Si2)1−x(GaAs)x solid solutions on silicon substrates

    Б. Сапаев, А. С. Саидов, B. N. Zaveryukhin

    ArticleSemiconductor materials and interfacesTechnical Physics Letters20041 citations
    ABI

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    Other1 citations
    ABI

  12. Synthesis and properties of Ge-(Ge2)1−x(GaAs)x (0≤x≤1.0) epitaxial heterostructures grown by LPE from lead-based solution melts

    Б. Сапаев

    ArticleSemiconductor materials and interfacesTechnical Physics Letters20041 citations
    ABI

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    Other1 citations
    ABI

  14. Growth and photoelectric properties of graded-gap Si-(Si2)1−x(GaP)x heterostructures

    Б. Сапаев, А. С. Саидов, S. Dadamukhamedov

    ArticleSemiconductor Quantum Structures and DevicesTechnical Physics20041 citations
    ABI

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    Other1 citations
    ABI

  16. Influence of Germanium and Zinc Selenium Nanocrystals on the Photoelectric Properties of the n-GaAs – p-(GaAs)0.69(Ge2)0.17(ZnSe)0.14 Heterostructure

    С. З. Зайнабидинов, Akramjon Y. Boboev, Jakhongir N. Usmonov

    ArticleSemiconductor materials and interfacesAlternative Energy and Ecology (ISJAEE)20191 citations
    ABI

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    Other1 citations
    ABI