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Works cited by this work

15 works

Work: The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes

  1. Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors

    Antonio J. García‐Loureiro, Natalia Seoane, M. Aldegunde +4

    Article20116 citations
    ABI

  2. Quantum corrections in the simulation of decanano MOSFETs

    Asen Asenov, A. R. Brown, J.R. Watling

    Article20034 citations
    ABI

  3. Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits

    Ming-Long Fan, Shao‐Yu Yang, Vita Pi‐Ho Hu +3

    Article20144 citations
    ABI

  4. RTN distribution comparison for bulk, FDSOI and FinFETs devices

    Louis Gerrer, Salvatore Amoroso, Razaidi Hussin +1

    Article20143 citations
    ABI

  5. Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer

    A. É. Atamuratov, Zamira Atamuratova, А. Yusupov +1

    ArticleSemiconductor materials and devicesResults in Physics20183 citations
    ABI

  6. Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer

    Zamira Atamuratova, А. Yusupov, B. O. Khalikberdiev +1

    ArticleSemiconductor materials and devicesTechnical Physics20193 citations
    ABI

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