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Works cited by this work

25 works

Work: Effect of GaSb Compound on Silicon Bandgap Energy

  1. Transport properties of silicon doped with manganese via low-temperature diffusion

    М. К. Бахадырханов, Г. Х. Мавлонов, С. Б. Исамов +4

    ArticleSilicon and Solar Cell TechnologiesInorganic Materials201124 citations
    ABI

  2. Self-organization of nickel atoms in silicon

    М. К. Бахадырханов, Х. М. Илиев, K. S. Ayupov +3

    ArticleSilicon Nanostructures and PhotoluminescenceInorganic Materials201110 citations
    ABI

  3. Photoconductivity of silicon with multicharged clusters of manganese atoms [Mn]4

    М. К. Бахадырханов, Г. Х. Мавлонов, С. Б. Исамов +4

    ArticleInorganic Fluorides and Related CompoundsSurface Engineering and Applied Electrochemistry201010 citations
    ABI

  4. Specific features of magnetoresistance in overcompensated manganese-doped silicon

    M. K. Bakhadirkhanov, G. H. Mavlonov, X. M. Iliev +3

    ArticleMagnetic Properties and ApplicationsSemiconductors20147 citations
    ABI

  5. Nanoscale III–V on Si-based junctionless tunnel transistor for EHF band applications

    Yogesh Goswami, Pranav Kumar Asthana, Bahniman Ghosh

    Article20173 citations
    ABI

  6. Impurity photovoltaic effect in silicon with multicharge Mn clusters

    М. К. Бахадырханов, Х. М. Илиев, С. А. Тачилин +2

    ArticleSemiconductor materials and interfacesApplied Solar Energy20082 citations
    ABI

  7. High performance 20 nm GaSb/InAs junctionless tunnel field effect transistor for low power supply

    Pranav Kumar Asthana

    Article20152 citations
    ABI

  8. Strain-induced the dark current characteristics in InAs/GaSb type-II superlattice for mid-wave detector

    H. J. Lee, Sung Yong Ko, Y. H. Kim +1

    Article20202 citations
    ABI

  9. Wet etching and passivation of GaSb-based very long wavelength infrared detectors

    Xue-Yue Xu, Junkai Jiang, Wei‐Qiang Chen +10

    Article20222 citations
    ABI

  10. Long-wavelength InAs/GaSb superlattice double heterojunction infrared detectors using InPSb/InAs superlattice hole barrier

    Jiafeng Liu, He Zhu, Hong Zhu +4

    Article20222 citations
    ABI

  11. X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates

    Jean‐Baptiste Rodriguez, K. Madiomanana, L. Cerutti +2

    Article20162 citations
    ABI

  12. Beyond the Vegard's law: solid mixing excess volume and thermodynamic potentials prediction, from end-members

    Marcellο Merli, Alessandrο Pavese

    Article20192 citations
    ABI

  13. Control of the magnetic properties of silicon with manganese atom nanoclusters

    М. К. Бахадырханов, Г. Х. Мавлонов, Х. М. Илиев

    ArticleMagnetic Field Sensors TechniquesTechnical Physics20142 citations
    ABI

  14. High-efficiency GaSb photocells

    В. П. Хвостиков, S. V. Sorokina, О. А. Хвостикова +5

    Article20132 citations
    ABI

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