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Works cited by this work

16 works

Work: The Influence of γ-Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Grown by the Czochralski Method

  1. Radiation Stability of Nickel Doped Solar Cells

    К. А. Исмайлов, Z. T. Kenzhaev, S. Koveshnikov +2

    ArticleSilicon and Solar Cell TechnologiesPhysics of the Solid State20229 citations
    ABI

  2. Clusters of nickel atoms and controlling their state in silicon lattice

    М. К. Бахадырханов

    ArticleSilicon Nanostructures and PhotoluminescenceSemiconductor Physics Quantum Electronics & Optoelectronics20189 citations
    ABI

  3. Influence of electrically neutral nickel atoms on electrical and recombination parameters of silicon

    М. К. Бахадырханов, B. K. Ismaylov, С. А. Тачилин +2

    Article20209 citations
    ABI

  4. Nickel solubility in intrinsic and doped silicon

    A. A. Istratov, P. Zhang, R. J. McDonald +6

    Article20045 citations
    ABI

  5. Interaction of radiation defects with nickel atom clusters in silicon

    Х. М. Илиев, Z.M. Saparniyazova, К. А. Исмайлов +2

    ArticleGraphite, nuclear technology, radiation studiesSurface Engineering and Applied Electrochemistry20115 citations
    ABI

  6. Effect of nickel on the lifetime of charge carriers in silicon solar cells

    Bakhadyrkhanov M.K., Kenzhaev Z.T., S. Koveshnikov +2

    ArticleSilicon and Solar Cell TechnologiesФизика и техника полупроводников20225 citations
    ABI

  7. Transition metals in silicon

    Eicke R. Weber

    Article19834 citations
    ABI

  8. Energy levels of vacancies and interstitial atoms in the band gap of silicon

    V. V. Lukjanitsa

    Article20034 citations
    ABI

  9. Thermal stability of electrical parameters of silicon crystal doped with nickel during growth

    M.K. Bakhadyrkhanov, Kanatbay A. Ismailov, E.Zh. Kosbergenov

    Article20223 citations
    ABI

  10. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

    Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

    ArticleSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20242 citations
    ABI

  11. Ti, Fe, and Ni in Si and their interactions with the vacancy and the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>A</mml:mi></mml:math>center: A theoretical study

    D. J. Backlund, S. K. Estreicher

    Article20102 citations
    ABI

  12. On the problem of Watkins substitution and migration of silicon atoms in silicon

    N. I. Berezhnov, A. R. Chelyadinskiĭ, M. Jadan +1

    Article19932 citations
    ABI

  13. The Effect of Gamma Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Solar Cells

    Z. T. Kenzhaev, Х. М. Илиев, В. Б. Оджаев +6

    ArticleSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20241 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI