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10 works

Work: Mechanism of charge transfer in n-CdS/p-CdTe heterojunctions

  1. Injection photodiode based on an n-CdS/p-CdTe heterostructure

    Ш. А. Мирсагатов, R. R. Kabulov, M. A. Makhmudov

    ArticleChalcogenide Semiconductor Thin FilmsSemiconductors201319 citations
    ABI

  2. Effect of the Diffusion of Copper Atoms in Polycrystalline CdTe Films Doped with Pb Atoms

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, S. A. Muzafarova +1

    ArticleAdvanced Semiconductor Detectors and MaterialsEast European Journal of Physics202312 citations
    ABI

  3. Effect of surface microroughness on the composition and electronic properties of CdTe/Mo(111) films

    Y. S. Ergashov, Д. А. Ташмухамедова, Flyura Djurabekova +1

    ArticleAdvanced Semiconductor Detectors and MaterialsBulletin of the Russian Academy of Sciences Physics201610 citations
    ABI

  4. The study of factors that influence on the effectiveness of the photoconversion of n-CdS/p-CdTe heterostructures

    R. R. Kabulov, M. A. Makhmudov, O. K. Ataboev +1

    ArticleChalcogenide Semiconductor Thin FilmsApplied Solar Energy20167 citations
    ABI

  5. Effect of implantation of active metal ions on the elemental and chemical compositions of the CdTe surface

    Z. E. Mukhtarov, З. А. Исаханов, Б. Е. Умирзаков +2

    ArticleAdvanced Semiconductor Detectors and MaterialsTechnical Physics20156 citations
    ABI

  6. Formation of photoelectron spectra of alloys niobium-molybdenum-zirconium

    Y. S. Ergashov, Burkhon Donaev, Sherzod Khudainazarov +1

    ArticleElectron and X-Ray Spectroscopy TechniquesE3S Web of Conferences20216 citations
    ABI

  7. Mechanism of charge transfer in n-CdS/p-CdTe heterostructures with a thick layer of the CdTe1 − x S x solid solution

    Kh. Kh. Ismoilov, A. M. Abdugafurov, Ш. А. Мирсагатов +1

    ArticleAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State20086 citations
    ABI

  8. Investigation of current-voltage characteristics of the n-CdS-p-CdTe structure with an extended layer of the intermediate solid solution

    Ш. А. Мирсагатов, A. Yu. Leĭderman, B. U. Aĭtbaev +1

    ArticleSilicon and Solar Cell TechnologiesPhysics of the Solid State20095 citations
    ABI

  9. Effect of Solar Radiation of Different Power on the Internal Amplification of the Primary Photocurrent in Heterostructures Based on Cadmium Telluride

    R. R. Kabulov, S. Yu. Gerasimenko, F. A. Akbarov

    ArticleAdvanced Semiconductor Detectors and MaterialsApplied Solar Energy20232 citations
    ABI

  10. Features of the Electrical Properties of Heterojunctions n-GaAs-p-(GaAs)1 - x - у(Ge2)x(ZnSe)y

    SIRAJIDDIN ZAYNABIDINOV, Akramjon Y. Boboev, DILHAYOTJON ABDURAHIMOV

    ArticleSemiconductor materials and interfacesComputational nanotechnology20220 citations
    ABI