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Works cited by this work

20 works

Work: Study of the dependence of the degree of disordering of the surface layers of Si(111) and Ge(111) single crystals upon bombardment with low-energy ions

  1. Formation of n-type CoSi monosilicide film which can be used in instrumentation

    I. R. Bekpulatov, Gunel Imanova, T. S. Kamilov +2

    ArticleSemiconductor materials and interfacesInternational Journal of Modern Physics B202222 citations
    ABI

  2. On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films

    Б. Е. Умирзаков, S. B. Donaev

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201721 citations
    ABI

  3. Obtaining of thin films of manganese silicides on a Si surface by the method of solid-phase deposition and investigation of their electronic structure

    Б. Е. Умирзаков, Gunel Imanova, I. R. Bekpulatov +1

    ArticleSemiconductor materials and interfacesModern Physics Letters B202317 citations
    ABI

  4. Composition and Structure of a Nanofilm Multilayer System of the SiO2/Si/CoSi2/Si(111) Type Obtained via Ion Implantation

    Y. S. Ergashov, Б. Е. Умирзаков

    ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20188 citations
    ABI

  5. Emissivity of Laser-Activated Pd–Ba Alloy

    S. B. Donaev, Б. Е. Умирзаков, N. M. Mustafaeva

    ArticleLaser Material Processing TechniquesTechnical Physics20195 citations
    ABI

  6. Influence of preliminary ion bombardment on the formation of Co and CoSi-=SUB=-2-=/SUB=- nanofilms on Si surface during solid-phase deposition

    Turapov I. Kh., I. R. Bekpulatov, A. Q. Tashatov +1

    ArticleIon-surface interactions and analysisПисьма в журнал технической физики20223 citations
    ABI

  7. Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

    S. B. Donaev, V N Karimova, A T Azimov +2

    ArticleNanowire Synthesis and ApplicationsIOP Conference Series Earth and Environmental Science20203 citations
    ABI

  8. EFFECT OF ION-IMPLANTATION DAMAGE ON THE OPTICAL REFLECTION SPECTRUM OF GALLIUM ARSENIDE

    G. A. Shifrin, Robert G. Hunsperger

    Article19702 citations
    ABI

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    Other1 citations
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    ABI

  20. Influence of Various Impacts on the Composition and Structure of the Surface of Single-Crystal Si

    Б. Е. Умирзаков, I. R. Bekpulatov, Z. A. Tursunmetova

    ArticleMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20231 citations
    ABI