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7 works

Work: Accumalations of impurity Ni atoms and their effect on the electrophysical properties of Si

  1. PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS

    Sh.B. Utamuradov, Shakhrukh Kh. Daliev, D.A. Rakhmanov +4

    ArticleSilicon and Solar Cell TechnologiesEurasian Physical Technical Journal20234 citations
    ABI

  2. Study of the Mobility and Electrical Conductivity of Chromium Silicide

    M. Sh. Isaev, Tokhirjon U. Atamirzaev, Mukhammadsodik N. Mamatkulov +2

    ArticleSemiconductor materials and interfacesEast European Journal of Physics20233 citations
    ABI

  3. Study of Silicide Formation in Large Diameter Monocrystalline Silicon

    A. T. Mamadalimov, Makhmudkhodja Sh. Isaev, Mukhammadsodik N. Mamatkulov +2

    ArticleSilicon and Solar Cell TechnologiesEast European Journal of Physics20242 citations
    ABI

  4. STUDYING THE INFLUENCE OF PROTON IRRADIATION ON THE DISTRIBUTION PROFILE OF Pt AND Cr IN SURFACE LAYERS n-Si˂Pt˃, n-Si˂Сr˃ USING ELLIPSOMETRIC SPECTROSCOPY

    Sharifa B. Utamuradova

    ArticleAdvanced Materials Characterization TechniquesAdvanced Physical Research20241 citations
    ABI

  5. Study of infrared quenching in silicide-silicon-silicide structures

    A. T. Mamadalimov, Makhmudhodzha Isaev

    ArticleSemiconductor materials and interfacesAdvanced Physical Research20240 citations
    ABI

  6. Influence of Accumulation of Impurity Atoms Ni and Fe on the Electrophysical Properties of Si Single Crystals

    N. A. Turgunov, Sh. K. Akbarov, N. B. Khaytimmetov +1

    ArticleSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20240 citations
    ABI

  7. Study of the Thermoelectric Properties of Chrome Silicides

    A. T. Mamadalimov, Makhmudkhodja Sh. Isaev, Ismoil T. Bozarov +2

    ArticleSemiconductor materials and interfacesEast European Journal of Physics20240 citations
    ABI